NaMLab gGmbH
NaMLab gGmbH

Overview

NaMLab was founded in 2006 as a public-private partnership between Qimonda AG and TU Dresden. In the first year, NaMLab started as a research organization with 10 employees focused on dielectric material research for future memory devices. The company steadily expanded and today, NaMLab serves a growing list of worldwide partners. NaMLab’s research is contributing to the main challenges for our future society concerning climate change, digitalization, and mobility by placing sustainable, secure, and intelligent electronic solutions into the core focus. Those solutions can be divided into three main activities:

Dielectrics for Semiconductor Devices,
Reconfigurable Device and,
Energy Efficiency Devices

NaMLab’s research in the field of dielectrics is focused on flourite-structure ferroelectric materials, such as hafnium oxide, and their application in capacitors. Here the main focus is on the understanding of how to control ferroelectricity in hafnium oxide, as well as the degradation… The NaMLab gGmbH is located in a vibration-cushioned building with both lab space and office areas. The lab space comprises a 330 m² of clean room with at least class 6, a 50 m² yellow lighted area with at least class 5, and 4 labs with 25 m² each.

Major equipment for process technology:

2 Atomic Layer Deposition (ALD) systems for oxide and nitride material deposition
1 CVD/RIE Cluster Tool with overall 24 different process gases
1 Inductive Coupled Plasma (ICP) Reactive Ion Etching Tool
5 Physical Vapor Deposition (PVD) Tools (1 UHV Sputter Cluster; 1 HV Sputter Cluster, 2 Small Scale Sputter Tools; 1 Evaporator)
5 different anneal ovens; including rapid thermal processing (RTP) for different temperature ranges and materials
1 Molecular Beam Epitaxy (MBE) / Molecular Beam Deposition (MBD) cluster tool for ultra-pure GaN materials
1 Hydrid Vapour Phase Epitaxy (HVPE) for bulk GaN growth
1 MOCVD Tool for GaN layer growth
1 Laser Cutter for sample preparation
1 Laser Lithography…. NaMLab develops materials for future electronic devices. We run industrial as well as basic research projects and provide services in the areas of sample preparation, electrical and physical characterization. Sample fabrication ranges from small scale (typically 4x4 cm or below) up to 150 mm wafers. Physical characterization is typically carried out on small scale samples. Electrical characterization is done by direct probing on wafer level using single probes, probe cards or special RF-probes. Package level testing can be performed for long-term reliability characterization or the adoption of our devices in test-circuits.

 Typical services comprise, but are not limited to:

Laser cutting of wafers
Deposition of thin films or stacks of thin films
Processing of capacitor structures
Processing of test structures for GaN wafer characterization
Physical characterization, electrical or optical characterization by any of the methods described below

The established electrical characterization…. Yes. service.